document number: 91 047 www.vishay.com s11-0508-rev. c, 21-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet IRF730, sihf730 vishay siliconix features ? dynamic dv/dt rating ? repetitive avalanche rated ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance thro ughout the industry. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 16 mh, r g = 25 , i as = 5.5 a (see fig. 12). c. i sd 5.5 a, di/dt 90 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 400 r ds(on) ( )v gs = 10 v 1.0 q g (max.) (nc) 38 q gs (nc) 5.7 q gd (nc) 22 configuration single n-channel mosfet g d s to-220ab g d s available rohs* compliant ordering information package to-220ab lead (pb)-free IRF730pbf sihf730-e3 snpb IRF730 sihf730 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 400 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 5.5 a t c = 100 c 3.5 pulsed drain current a i dm 22 linear derating factor 0.59 w/c single pulse avalanche energy b e as 290 mj repetitive avalanche current a i ar 5.5 a repetitive avalanche energy a e ar 7.4 mj maximum power dissipation t c = 25 c p d 74 w peak diode recovery dv/dt c dv/dt 4.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91047 2 s11-0508-rev. c, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -1.7 specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 400 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.54 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 400 v, v gs = 0 v - - 25 a v ds = 320 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 3.3 a b --1.0 forward transconductance g fs v ds = 50 v, i d = 3.3 a b 2.9 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 700 - pf output capacitance c oss - 170 - reverse transfer capacitance c rss -64- total gate charge q g v gs = 10 v i d = 3.5 a, v ds = 320 v, see fig. 6 and 13 b --38 nc gate-source charge q gs --5.7 gate-drain charge q gd --22 turn-on delay time t d(on) v dd = 200 v, i d = 3.5 a r g = 12 , r d = 57 , see fig. 10 b -10- ns rise time t r -15- turn-off delay time t d(off) -38- fall time t f -14- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --5.5 a pulsed diode forward current a i sm --22 body diode voltage v sd t j = 25 c, i s = 5.5 a, v gs = 0 v b --1.6v body diode reverse recovery time t rr t j = 25 c, i f = 3.5 a, di/dt = 100 a/s b - 270 530 ns body diode reverse recovery charge q rr -1.82.2c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
document number: 91 047 www.vishay.com s11-0508-rev. c, 21-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-r esistance vs. temperature bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 25 c 4.5 v 91047_01 10 1 10 0 10 -1 10 0 10 1 v ds , drain-to-source voltage (v) i d , drain current (a) 10 -1 91047_02 4.5 v 20 s pulse width t c = 150 c 10 1 10 0 10 -1 10 0 10 1 v ds , drain-to-source voltage (v) i d , drain current (a) 10 -1 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 91047_03 10 1 10 0 i d , drain current (a) v gs , gate-to-source voltage (v) 5678910 4 10 -1 25 c 150 c 20 s pulse width v ds = 50 v 91047_04 i d = 3.5 a v gs = 10 v 3.0 0.0 0.5 1.0 1.5 2.0 2.5 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized)
www.vishay.com document number: 91047 4 s11-0508-rev. c, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 91047_05 c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1500 1200 900 0 300 600 10 0 10 1 capacitance (pf) v ds , drain-to-source voltage (v) 91047_06 i d = 3.5 a for test circuit see figure 13 v dd = 80 v v dd = 200 v v dd = 320 v q g , total gate charge (nc) v gs , gate-to-source voltage (v) 20 16 12 8 0 4 010 50 40 30 20 91047_07 25 c 150 c v gs = 0 v 10 1 10 0 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 0.6 1.0 0.9 0.8 0.7 1.1 1.2 10 s 100 s 1 ms 10 ms operation in this area limited by r ds(on) t c = 25 c t j = 150 c single pulse 91047_08 v ds , drain-to-source voltage (v) i d , drain current (a) 10 2 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 25 10 3 25 10 4 0.1
document number: 91 047 www.vishay.com s11-0508-rev. c, 21-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case 91047_09 i d , drain current (a) t c , case temperature (c) 0.0 2.0 3.0 4.0 5.0 6.0 25 150 125 100 75 50 1.0 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 91047_11 10 1 0.1 10 -2 thermal response (z thjc ) 10 -5 10 -4 10 -3 10 -2 0.1 1 10 t 1 , rectangular pulse duration (s) p dm t 1 t 2 notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01
www.vishay.com document number: 91047 6 s11-0508-rev. c, 21-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd 10 v vary t p to obtain required i as i as v ds v dd v ds t p 91047_12c 600 0 100 200 300 400 500 25 150 125 100 75 50 starting t j , junction temperature (c) e as , single pulse energy (mj) 700 bottom to p i d 2.5 a 3.5 a 5.5 a v dd = 50 v q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
document number: 91 047 www.vishay.com s11-0508-rev. c, 21-mar-11 7 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 IRF730, sihf730 vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91047 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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